Compact Modeling by Gennady Gildenblat

Author:Gennady Gildenblat
Language: eng
Format: epub
Publisher: Springer Netherlands, Dordrecht

Figure 8.8b shows a similar example for the BC depletion capacitance. Note that the junction perimeter has been replaced by the area A BCX =A BC −A E0, where A BC is the area of the total BC junction. This distinction is made to account for the selectively implanted collector (SIC), which leads to two distinct BC junction regions: the internal region below the emitter, and the external region with much lower doping outside the emitter. A possible perimeter part of the external capacitances can be taken into account, although this is typically not necessary due to the STI being the junction boundary.

Figure 8.9 shows the resulting extraction of the BE area and perimeter specific depletion capacitances (for consistency with Fig. 8.8, a reduced number of bias points is shown). Similar results are obtained for the base-collector specific capacitances (not shown here). Once the specific capacitances are obtained, the related specific model parameters can be determined by a simple non-linear fit of the well-known depletion capacitance equation shown as inset in Fig. 8.2.

Fig. 8.9Extracted C jEA (left) C jEP (right) versus V BE (Reduced number of data points for clarity)

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